MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 Vishay General Semiconductor SISA18ADN-T1-GE3
Hãng sản xuất: Vishay General Semiconductor Model: SISA18ADN-T1-GE3 - Liên hệ
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TP. Hà Nội: (024) 35.381.269
TP. Đà Nẵng: (023) 63.747.711
TP. Bắc Ninh: (0222)730.39.68
TP. HCM: (028) 38.119.636
Width: 3.3 mm
Height: 1.04 mm
Length: 3.3 mm
Fall Time: 7 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 21.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 19.8 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 15 ns
Id - Continuous Drain Current: 38.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 54 S
Rds On - Drain-Source Resistance: 6 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
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